发明名称 Sealing composition for semiconductor, semiconductor device and method of producing the same, and polymer and method of producing the same
摘要 In the invention, a sealing composition for a semiconductor is provided which includes a polymer that includes two or more cationic functional groups including at least one of a tertiary nitrogen atom or a quaternary nitrogen atom, that has a weight average molecular weight of from 2,000 to 1,000,000, and that has a branching degree of 48% or more, wherein a content of sodium and a content of potassium in the sealing composition are each 10 ppb by weight or less on an element basis.
申请公布号 US9169353(B2) 申请公布日期 2015.10.27
申请号 US201314372237 申请日期 2013.01.16
申请人 MITSUI CHEMICALS, INC. 发明人 Ono Shoko;Kayaba Yasuhisa;Tanaka Hirofumi;Kohmura Kazuo;Suzuki Tsuneji;Mio Shigeru
分类号 C08G73/02;H01L23/29;H01L21/02;H01L23/532;H01L21/56;C09J179/02;C09K3/10 主分类号 C08G73/02
代理机构 Buchanan, Ingersoll & Rooney PC 代理人 Buchanan, Ingersoll & Rooney PC
主权项 1. A sealing composition for a semiconductor, comprising a polymer that includes two or more cationic functional groups including at least one of a tertiary nitrogen atom or a quaternary nitrogen atom, that has a weight average molecular weight of from 20,000 to 1,000,000, and that has a branching degree of 48% or more, wherein the polymer includes primary nitrogen atoms, and a proportion of the primary nitrogen atoms to all the nitrogen atoms in the polymer is 33% by mole or more, and wherein a content of sodium and a content of potassium in the sealing composition are each 10 ppb by weight or less on an element basis.
地址 Tokyo JP