发明名称 |
Sealing composition for semiconductor, semiconductor device and method of producing the same, and polymer and method of producing the same |
摘要 |
In the invention, a sealing composition for a semiconductor is provided which includes a polymer that includes two or more cationic functional groups including at least one of a tertiary nitrogen atom or a quaternary nitrogen atom, that has a weight average molecular weight of from 2,000 to 1,000,000, and that has a branching degree of 48% or more, wherein a content of sodium and a content of potassium in the sealing composition are each 10 ppb by weight or less on an element basis. |
申请公布号 |
US9169353(B2) |
申请公布日期 |
2015.10.27 |
申请号 |
US201314372237 |
申请日期 |
2013.01.16 |
申请人 |
MITSUI CHEMICALS, INC. |
发明人 |
Ono Shoko;Kayaba Yasuhisa;Tanaka Hirofumi;Kohmura Kazuo;Suzuki Tsuneji;Mio Shigeru |
分类号 |
C08G73/02;H01L23/29;H01L21/02;H01L23/532;H01L21/56;C09J179/02;C09K3/10 |
主分类号 |
C08G73/02 |
代理机构 |
Buchanan, Ingersoll & Rooney PC |
代理人 |
Buchanan, Ingersoll & Rooney PC |
主权项 |
1. A sealing composition for a semiconductor, comprising a polymer that includes two or more cationic functional groups including at least one of a tertiary nitrogen atom or a quaternary nitrogen atom, that has a weight average molecular weight of from 20,000 to 1,000,000, and that has a branching degree of 48% or more, wherein the polymer includes primary nitrogen atoms, and a proportion of the primary nitrogen atoms to all the nitrogen atoms in the polymer is 33% by mole or more, and wherein a content of sodium and a content of potassium in the sealing composition are each 10 ppb by weight or less on an element basis. |
地址 |
Tokyo JP |