NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

The present invention relates to a nitride semiconductor element and a manufacturing method thereof. The nitride semiconductor element comprises: an n-type nitride semiconductor layer; a low temperature growth layer disposed on an upper portion of the n-type nitride semiconductor layer, and grown at a lower temperature than the n-type nitride semiconductor layer; a superlattice layer disposed on an upper portion of the low temperature growth layer; an activation layer disposed on an upper portion of the superlattice layer, and provided with a V-pit formed thereon; and a p-type nitride semiconductor layer disposed on an upper portion of the activation layer. The superlattice layer can expand a width of the V-pit by a compressive strain by a larger lattice constant than the low temperature growth layer. According to the present invention, the low temperature growth layer is selected to increase a size of the V-pit and improve an electrostatic discharge characteristic without degrading brightness or an electric characteristic of the nitride semiconductor element.