发明名称 Multi-granularity parallel storage system
摘要 A multi-granularity parallel storage system including a plurality of memories, a shift generator, an address increment lookup unit, an address shifter, a row address generator, and a plurality of address adders. The shift generator is configured to generate a shift value. The address increment lookup unit is configured to generate input data for the address shifter. The address shifter is configured to cyclically shift the input data rightward by Shift elements and then output the shifted data. The row address generator is configured to generate a row address RowAddr and input the generated row address RowAddr to the other input terminal of each address adder. Each address adder is configured to perform a non-sign addition of the input data at the two input terminals to obtain a read/write (R/W) address for one of the memories and input the R/W address to an address input terminal of the memory.
申请公布号 US9171593(B2) 申请公布日期 2015.10.27
申请号 US201114117295 申请日期 2011.12.31
申请人 Institute of Automation, Chinese Academy of Sciences 发明人 Wang Donglin;Liu Zijun;Xue Xiaojun;Zhang Xing;Zhang Zhiwei;Xie Shaolin
分类号 G06F12/02;G11C7/10;G06F3/06;G06F12/06;G11C11/406;G11C21/00;G06F9/38 主分类号 G06F12/02
代理机构 Osha Liang LLP 代理人 Osha Liang LLP
主权项 1. A multi-granularity parallel storage system comprising: a plurality of memories; a shift generator configured to generate a shift value Shift based on an externally-input address Addr; an address increment lookup unit configured to generate input data based on a read/write (R/W) granularity g; an address shifter configured to cyclically shift the input data rightward by Shift elements and output the shifted data; a row address generator configured to generate a row address RowAddr based on an externally-input address Addr; and a plurality of address adders each configured to perform a non-sign addition of the shifted data received at one input terminal and the generated row address RowAddr received at another input terminal to obtain a R/W address for one of the memories, and input the R/W address to an address input terminal of the memory.
地址 Beijing CN