发明名称 Nano structured field effect sensor and methods of forming and using same
摘要 A solid-state field-effect transistor sensor for detecting chemical and biological species and for detecting changes in radiation is disclosed. The device includes a porous or structured channel section to improve device sensitivity. The device is operated in a fully depleted mode such that a sensed biological, chemical or radiation change causes an exponential change in channel conductance.
申请公布号 US9170228(B2) 申请公布日期 2015.10.27
申请号 US200812663666 申请日期 2008.06.06
申请人 发明人 Takulapalli Bharath R.
分类号 G01N27/414 主分类号 G01N27/414
代理机构 Snell & Wilmer L.L.P. 代理人 Snell & Wilmer L.L.P.
主权项 1. A sensor for detecting a biological, chemical, or radioactive species, the sensor comprising: a substrate; an insulator formed overlying a portion of the substrate; and a channel formed overlying the insulator, wherein the channel surface comprises structures or pores formed therein, and wherein the sensor is configured to operate in a fully depleted mode, such that a sensed biological, chemical, or radioactive species causes an exponential change in channel conductance of the field effect sensor, wherein the channel comprises a plurality of structures and wherein a width of each of the plurality of structures is from about 10 Angstrom to 10 millimeters, and wherein the plurality of structures have different widths.
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