Combination finFET/ultra-thin body transistor structure and methods of making such structures

摘要

One illustrative device disclosed herein includes, among other things, an active layer positioned above a layer of insulating material, a fin positioned above the active layer, a gate insulation layer positioned on the active layer and on the fin, a conductive gate structure that is positioned around at least a portion of the fin and above at least a portion of the active layer, wherein the conductive gate structure comprises at least one work function adjusting metal layer positioned on the gate insulation layer, a first channel region defined in the fin under the conductive gate structure, and a second channel region defined in the active layer under the conductive gate structure.

主权项

1. A device, comprising:
an active layer positioned above a layer of insulating material a fin positioned above said active layer; a gate insulation layer positioned on said active layer and on said fin; a conductive gate structure that is positioned around at least a portion of said fin and above at least a portion of said active layer, wherein said conductive gate structure comprises at least one work function adjusting metal layer positioned on said gate insulation layer; a first channel region defined in said fin under said conductive gate structure; and a second channel region defined in said active layer under said conductive gate structure.