HIGH-PERFORMANCE GRAPHENE APTASENSOR BASED ON FIELD EFFECT TRANSISTOR FOR MERCURY DETECTION

摘要

The present invention relates to a method for manufacturing a high-susceptibility field-effect transistor for mercury detection using graphene channel applied with an aptamer selectively susceptible to mercury, which comprises the steps of: introducing a metal electrode into a graphene substrate made by a chemical vapor deposition method through a thermal deposition process; manufacturing an electrode using graphene as a channel; reforming the surface of the graphene channel; fixating the aptamer through a Schiff base reaction; introducing a field-effect transistor; monitoring the changes in the current in accordance with the selective combination of mercury and the aptamer; and detecting traces of mercury. According to the present invention, the mercury sensor manufactured has susceptibility which is about 100 times greater than that of conventional mercury sensors based on a field-effect transistor by using graphene with high charge carrier mobility and high conductivity and resolves problems of conventional colorimetric sensors and fluorescent sensors by sensing mercury within one second. The mercury sensor manufactured by the present invention provides high selectivity by using an aptamer selectively susceptible to mercury.