| 发明名称 | Semiconductor device and method for manufacturing the same | ||
| 摘要 | According to one embodiment, a semiconductor device includes a first semiconductor layer of an n type including a nitride semiconductor, a first metal layer of an alloy containing Al and Au, and a second metal layer. The first metal layer is in contact with the first semiconductor layer. The second metal layer is in contact with the first metal layer. The second metal layer includes a metal different from Al. The first metal layer is disposed between the second metal layer and the first semiconductor layer. | ||
| 申请公布号 | US9172017(B2) | 申请公布日期 | 2015.10.27 |
| 申请号 | US201313780486 | 申请日期 | 2013.02.28 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Ito Toshihide;Katsuno Hiroshi;Nunoue Shinya |
| 分类号 | H01L21/00;H01L33/62;H01L33/40;H01L33/32;H01S5/042;H01S5/323 | 主分类号 | H01L21/00 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A semiconductor device comprising: a first semiconductor layer of an n type including a nitride semiconductor; a first metal layer of an alloy containing Al, Au and Ni, the first metal layer being in contact with the first semiconductor layer; a second metal layer in contact with the first metal layer, the second metal layer including a metal different from Al, the first metal layer being disposed between the second metal layer and the first semiconductor layer, wherein a ratio of Ni in the alloy is not less than 0.05 and not more than 0.14, a ratio of Al in the alloy is not less than 0.14 and not more than 0.34, a ratio of Au in the alloy is not less than 0.55 and not more than 0.84, and a total of the ratio of the Ni, the ratio of the Al, and the ratio of the Au is 1. | ||
| 地址 | Tokyo JP | ||