SOI bipolar junction transistor with substrate bias voltages

摘要

A circuit configuration and methods for controlling parameters of a bipolar junction transistor (BJT) fabricated on a substrate. A bias voltage is electrically coupled to the substrate and can be adjusted to alter the working parameters of a target BJT.

主权项

1. An integrated circuit comprising:
a substrate; a bipolar circuit fabricated on the substrate, the bipolar circuit including at least one npn BJT transistor and at least one pnp BJT transistor; a target bipolar transistor in the bipolar circuit; a controller configured to adjust a substrate bias voltage at the substrate; a doped well electrically isolating the target bipolar transistor from the substrate; and wherein the controller is further configured to adjust a well bias voltage to the doped well, the well bias voltage being different than the substrate bias voltage.