发明名称 Parasitic extraction in an integrated circuit with multi-patterning requirements
摘要 Systems and methods are provided for extracting parasitics in a design of an integrated circuit with multi-patterning requirements. The method includes determining resistance solutions and capacitance solutions. The method further includes performing parasitic extraction of the resistance solutions and the capacitance solutions to generate mean values for the resistance solutions and the capacitance solutions. The method further includes capturing a multi-patterning source of variation for each of the resistance solutions and the capacitance solutions during the parasitic extraction. The method further includes determining a sensitivity for each captured source of variation to a respective vector of parameters. The method further includes determining statistical parasitics by multiplying each of the resistance solutions and the capacitance solutions by the determined sensitivity for each respective captured source of variation. The method further includes generating as output the statistical parasitics in at least one of a vector form and a collapsed reduced vector form.
申请公布号 US9171124(B2) 申请公布日期 2015.10.27
申请号 US201314139023 申请日期 2013.12.23
申请人 GLOBALFOUNDRIES U.S. 2 LLC 发明人 Buck Nathan;Dreibelbis Brian;Dubuque John P.;Foreman Eric A.;Habitz Peter A.;Hathaway David J.;Hemmett Jeffrey G.;Venkateswaran Natesan;Visweswariah Chandramouli;Zolotov Vladimir
分类号 G06F17/50 主分类号 G06F17/50
代理机构 Roberts Mlotkowski Safran & Cole, P.C. 代理人 Cain David;Roberts Mlotkowski Safran & Cole, P.C.
主权项 1. A method of parasitic extraction for multi-patterning in an integrated circuit design, the method comprising: determining resistance solutions and capacitance solutions for a netlist of the integrated circuit design using a processor; performing a first parasitic extraction of the resistance solutions and the capacitance solutions to generate a first set of parasitic values comprising mean values for the resistance solutions and the capacitance solutions; modifying at least one geometrical value to a new value for each vector of parameters identified within the integrated circuit design based on a shift in value attributable to multi-patterning for a given layer of the integrated circuit design; performing a second parasitic extraction of the resistance solution and the capacitance solution based on the modified at least one geometrical value, to generate a second set of parasitic values; determining a difference between the first set of parasitic values and the second set of parasitic values to generate sensitivities for each captured source of variation to a respective vector of parameters based on the shift in the value attributable to the multi-patterning; and generating as output statistical parasitics in at least one of a vector form and a collapsed reduced vector form, wherein the statistical parasitics are determined by multiplying each of the resistance solutions and the capacitance solutions by the generated sensitivities, wherein the integrated circuit design is configured to be implemented to manufacture integrated circuit devices with a multi-pattern process.
地址 Hopewell Junction NY US