发明名称 Electrostatic discharge protection circuit having high allowable power-up slew rate
摘要 A technique for providing electrostatic discharge (ESD) protection in complementary metal-oxide semiconductor (CMOS) technologies is disclosed. A power supply RC-based ESD protection circuit having an RC value in the nanosecond range increases the allowable power-up slew rate so that fast power-up events (e.g., hot-plug and power switching operations) are not erroneously interpreted as ESD events. Because the RC value is small, the layout area needed for the RC-based ESD protection circuit is also reduced.
申请公布号 US9172241(B2) 申请公布日期 2015.10.27
申请号 US201213436607 申请日期 2012.03.30
申请人 NVIDIA Corporation 发明人 Chen Jau-Wen
分类号 H02H9/00;H02H9/04 主分类号 H02H9/00
代理机构 Artegis Law Group, LLP 代理人 Artegis Law Group, LLP
主权项 1. An RC-based electrostatic discharge (ESD) protection circuit, comprising: a RC filter and pull-up sub-circuit that is configured to detect an ESD event and pull-up a switch node, wherein the RC filter is directly coupled to the pull-up sub-circuit and includes a resistor and a first capacitor having an RC time constant; a controlling sub-circuit that is coupled to the RC filter and pull-up sub-circuit and activated after the switch node is pulled up by the RC filter and pull-up sub-circuit and includes a source follower that is configured to isolate the switch node from a VDD supply and a GND supply after the switch node is pulled up by the RC filter and pull-up sub-circuit; and an ESD sub-circuit that is coupled to the switch node and is activated to conduct an ESD current when the switch node is pulled-up by the RC filter and pull-up sub-circuit.
地址 Santa Clara CA US