发明名称 |
Electrostatic discharge protection circuit having high allowable power-up slew rate |
摘要 |
A technique for providing electrostatic discharge (ESD) protection in complementary metal-oxide semiconductor (CMOS) technologies is disclosed. A power supply RC-based ESD protection circuit having an RC value in the nanosecond range increases the allowable power-up slew rate so that fast power-up events (e.g., hot-plug and power switching operations) are not erroneously interpreted as ESD events. Because the RC value is small, the layout area needed for the RC-based ESD protection circuit is also reduced. |
申请公布号 |
US9172241(B2) |
申请公布日期 |
2015.10.27 |
申请号 |
US201213436607 |
申请日期 |
2012.03.30 |
申请人 |
NVIDIA Corporation |
发明人 |
Chen Jau-Wen |
分类号 |
H02H9/00;H02H9/04 |
主分类号 |
H02H9/00 |
代理机构 |
Artegis Law Group, LLP |
代理人 |
Artegis Law Group, LLP |
主权项 |
1. An RC-based electrostatic discharge (ESD) protection circuit, comprising:
a RC filter and pull-up sub-circuit that is configured to detect an ESD event and pull-up a switch node, wherein the RC filter is directly coupled to the pull-up sub-circuit and includes a resistor and a first capacitor having an RC time constant; a controlling sub-circuit that is coupled to the RC filter and pull-up sub-circuit and activated after the switch node is pulled up by the RC filter and pull-up sub-circuit and includes a source follower that is configured to isolate the switch node from a VDD supply and a GND supply after the switch node is pulled up by the RC filter and pull-up sub-circuit; and an ESD sub-circuit that is coupled to the switch node and is activated to conduct an ESD current when the switch node is pulled-up by the RC filter and pull-up sub-circuit. |
地址 |
Santa Clara CA US |