SPIN TRANSFER TORQUE-MAGNETIC RANDOM ACCESS MEMORY(STT-MRAM) ELEMENT HAVING MULTI-LEVEL RESISTANCE

摘要

A spin transfer torque-magnetic random access memory (STT-MRAM) device having multi-level resistance comprises: a lower electrode and an upper electrode for applying voltage; at least one magnification change layer having a magnification state changed by a spin transfer torque (STT) phenomenon when the voltage is applied by the lower electrode and the upper electrode; and at least one voltage applying layer for applying control voltage separated from the voltage applied by the lower electrode and the upper electrode to the magnification change layer.