TENSILE NITRIDE PROFILE SHAPER ETCH TO PROVIDE VOID FREE GAPFILL

摘要

A method of reducing the impact of FEoL topography on dual stress liner depositions and the resulting device are disclosed. Embodiments include forming a first nitride layer between and over a pFET and an nFET; thinning the first nitride layer; forming a second nitride layer over the first nitride layer; and removing the first and the second nitride layers from over the pFET.

主权项

1. A method comprising:
forming a first nitride layer between and over a p-channel metal-oxide-semiconductor field-effect transistor (pFET) and an n-channel metal-oxide-semiconductor field-effect transistor (nFET); thinning the first nitride layer to a uniform thickness over the entire first nitride layer; forming a second nitride layer over the first nitride layer; and removing the first and the second nitride layers from over the pFET.