发明名称 METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
摘要 A silicon carbide substrate having a main surface angled off in an off direction relative to a {0001} plane is prepared. A protruding first alignment mark is formed on the main surface of the silicon carbide substrate. A second alignment mark is formed on the first alignment mark by forming a silicon carbide epitaxial layer on the first alignment mark. The first alignment mark includes a first region and a second region, the second region being in contact with the first region and extending from the first region in the off direction. The second alignment mark includes a first portion formed on the first region and a second portion formed on the second region. An alignment step includes the step of capturing an image of the first portion while not including the second portion, and recognizing an edge of the first portion based on the image.
申请公布号 US2015303119(A1) 申请公布日期 2015.10.22
申请号 US201514657341 申请日期 2015.03.13
申请人 Sumitomo Electric Industries, Ltd. 发明人 TAMASO Hideto
分类号 H01L21/66;H01L29/66;H01L23/544;H01L21/02;H01L21/04 主分类号 H01L21/66
代理机构 代理人
主权项 1. A method of manufacturing a silicon carbide semiconductor device, comprising the steps of: preparing a silicon carbide substrate having a main surface angled off relative to a {0001} plane; forming a protruding first alignment mark on said main surface of said silicon carbide substrate; forming a second alignment mark on said first alignment mark by forming a silicon carbide epitaxial layer on said first alignment mark; and performing alignment of said silicon carbide substrate using said second alignment mark, said first alignment mark including a first region and a second region, said second region being in contact with said first region and extending from said first region in an off direction in which a <0001> direction is projected onto said main surface, said first region including a short side along a direction parallel to said off direction, and a long side along a direction perpendicular to said off direction within said main surface, said second alignment mark including a first portion formed on said first region and a second portion formed on said second region, said step of performing alignment including the step of capturing an image of said first portion while not including said second portion, and recognizing an edge of said first portion based on said image.
地址 Osaka-shi JP