Non-Contact Physical Etching System

摘要

The present invention provides a non-contact physical etching system mainly consisting of a main body, a hollow chamber, a plasma generating device, a first mask, and a target carrying platform. Particularly, this non-contact physical etching system can be used for executing a non-contact etching process to a target put on the target carrying platform, without using any lithography processes. Moreover, when the non-contact etching process is operated, the plasma in the hollow chamber would produce a spontaneous electric field near the surface of the first mask for maintaining the electrical neutrality thereof; therefore, by the action of the spontaneous electric field perpendicular to the surface of the first mask, the charged ions in the plasma would be accelerated and then pass through at least one first pattern formed on the first mask, such that the charged ions would etch or cut the target by way of bombarding the target.

主权项

1. A non-contact physical etching system, comprising:
a main body, having a first chamber and a second chamber isolated to each other by a partition member; wherein the first chamber and the second chamber are used as a plasma supplying chamber and a plasma etching chamber, respectively; a hollow chamber, being deposed on the partition member for simultaneously pass through the first chamber and the second chamber; a working gas supplying device, being connected to the main body, and used for inputting a working gas to the main body, so as to make the working gas be transformed to a first portion of the hollow chamber located in the first chamber; a first mask, being disposed in the second chamber and connected to the hollow chamber for shielding a second portion of the hollow chamber locating in the second chamber, such that the plasma formed in the first portion of the hollow chamber can be avoided from directly moving into the second chamber; wherein the first mask is also used as a spontaneous electric field triggering member; and a target carrying platform, being disposed in the second chamber and opposite to the first mask; wherein the plasma in the first portion of the hollow chamber would produce a spontaneous electric field near the surface of the first mask for maintaining the electrical neutrality thereof; therefore, by the action of the spontaneous electric field perpendicular to the surface of the first mask, a plurality of charged ions in the plasma being accelerated and then pass through at least one first pattern formed on the first mask, such that the charged ions would etch or cut a target put on the target carrying platform by way of bombarding the target.