| 摘要 |
Provided is a line source that is capable of highly accurately controlling, in film formation, a speed or the like of forming a film on a substrate, and a vapor deposition rate or the like by each vapor deposition material in co-deposition. A line source of the present invention is provided with: a vacuum container; a vapor discharge section, which is configured from a substantially cylindrical long body that is disposed in the vacuum container, and which has disposed therein a plurality of discharge ports in the longitudinal direction, said discharge ports discharging vapor in the substrate direction from the inside; a vapor generating section, which is disposed outside of the vacuum container, and which supplies vapor to the inside of the vapor discharge section, said vapor having been generated by heating a vapor deposition material contained in a crucible; and a connecting section, which airtightly connects the vapor generating section and an end portion of the vapor discharge section to each other, and which is provided with a valve for adjusting a quantity of the vapor to be supplied to the inside of the vapor discharge section from the vapor generating section. |
