发明名称 METHOD OF FABRICATING COLLIMATOR FOR SEMICONDUCTOR X-RAY DETECTOR
摘要 PROBLEM TO BE SOLVED: To provide a method of fabricating a collimator on a cathode upper surface of a semiconductor detector by arrangement corresponding to a plurality of anodes in the semiconductor detector.SOLUTION: A method of fabrication of a collimator for a semiconductor detector comprises: applying a first layer of resist to the circumference of side surfaces of an intermediate between a cathode and an anode of a semiconductor sensor; exposing a second layer of resist, which is applied to and covers the cathode, intermediate and first layer of resist, to prescribed light with a photomask arranged in a prescribed pattern; removing a plurality of portions of the second layer of resist corresponding to the pattern so as to expose the first layer of resist, the cathode and a portion of the side surfaces of the intermediate; depositing a layer of metal having an X-ray shielding heavy metal on the exposed first layer of resist, portion of the side surfaces of the intermediate, cathode and second layer of resist; polishing the layer of metal to expose the second layer of resist; and dicing to separate the second layer of resist of a portion not sandwiched between the layers of metal in the exposed second layer of resist.
申请公布号 JP2015184277(A) 申请公布日期 2015.10.22
申请号 JP20150036881 申请日期 2015.02.26
申请人 TOSHIBA CORP;TOSHIBA MEDICAL SYSTEMS CORP 发明人 ZHANG YUEXING;GAGNON DANIEL;XIAOLAN WANG
分类号 G01T7/00;A61B6/03;G01T1/24 主分类号 G01T7/00
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