发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device.SOLUTION: The present invention provides a semiconductor device that comprises a first conductivity type of substrate having an active region and a termination region; a first conductivity type of an epitaxial layer on the substrate; a plurality of first and second trenches in the epitaxial layer; an implantation block layer formed on bottom parts of the first and second trenches; a liner having the second conductivity differing from the first conductivity type and conformally formed along side walls of the first and second trenches; a dielectric material filled in the first and second trenches defining a plurality of first and second columns respectively; a gate dielectric layer on the epitaxial layer; two floating gates formed on the gate dielectric layer; a source region; an interlayer insulation film layer; and a contact plug formed on the source region. |
申请公布号 |
JP2015185635(A) |
申请公布日期 |
2015.10.22 |
申请号 |
JP20140059590 |
申请日期 |
2014.03.24 |
申请人 |
VANGUARD INTERNATL SEMICONDUCTOR CORP |
发明人 |
RAHUL KUMAR;MANOJ KUMAR;HEO GUN;YANG SHAO MING;RUDY OCTAVIUS SIHOMBING;LI CHIA-HAO;DU SHANG HUI |
分类号 |
H01L29/78;H01L29/06 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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