| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a thin film transistor capable of obtaining a high on-current and a manufacturing method of the same.SOLUTION: The thin film transistor includes: an insulating substrate; at least a gate electrode, a gate insulating layer, a source electrode, a drain electrode, and a channel layer containing an organic semiconductor on the insulating substrate; and a contact layer containing an organic semiconductor between a source electrode surface and a drain electrode surface, and the channel layer.</p> |
