发明名称 MANUFACTURING METHOD OF THIN FILM
摘要 <p>PROBLEM TO BE SOLVED: To provide a method for manufacturing at a high film forming rate a transparent conductive oxide thin film having a visible light permeability and an electric conductivity enhanced by suppressing damage from charged particles in plasma as much as possible.SOLUTION: A substrate S and a sputtering target T to form a transparent conductive oxide thin film are arranged facing each other in a vacuum vessel. The following treatments are simultaneously practiced. (i) Plasma is formed between the substrate S and the sputtering target T. (ii) A bias electric field is formed between the substrate S and the sputtering target T to accelerate charged particles in the plasma toward the surface of the sputtering target T. (iii) A high-frequency electromagnetic field is formed in the vicinity of the surface of the sputtering target T using a high-frequency antenna 16 to enhance the plasma density in the vicinity of the surface of the sputtering target T.</p>
申请公布号 JP2015183242(A) 申请公布日期 2015.10.22
申请号 JP20140061356 申请日期 2014.03.25
申请人 EMD:KK 发明人 NISHIKAWA MASAZUMI;MAEDA NAOKI;EBE AKINORI
分类号 C23C14/34;C23C14/08 主分类号 C23C14/34
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