| 发明名称 |
Methods Of Forming Ferroelectric Capacitors |
| 摘要 |
A method of forming a ferroelectric capacitor includes forming inner conductive capacitor electrode material over a substrate. After forming the inner electrode material, an outermost region of the inner electrode material is treated to increase carbon content in the outermost region from what it was prior to the treating. After the treating, ferroelectric capacitor dielectric material is formed over the treated outermost region of the inner electrode material. Outer conductive capacitor electrode material is formed over the ferroelectric capacitor dielectric material. |
| 申请公布号 |
US2015303206(A1) |
申请公布日期 |
2015.10.22 |
| 申请号 |
US201414254327 |
申请日期 |
2014.04.16 |
| 申请人 |
Micron Technology, Inc. |
发明人 |
Chavan Ashonita A.;Ramaswamy Durai Vishak Nirmal;Tao Qian |
| 分类号 |
H01L27/115;H01L21/265;H01L21/223;H01L49/02 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a ferroelectric capacitor, comprising:
forming inner conductive capacitor electrode material over a substrate; after forming the inner electrode material, treating an outermost region of the inner electrode material to increase carbon content in the outermost region from what it was prior to the treating; after the treating, forming ferroelectric capacitor dielectric material over the treated outermost region of the inner electrode material; and forming outer conductive capacitor electrode material over the ferroelectric capacitor dielectric material. |
| 地址 |
Boise ID US |
