发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A p anode layer is formed on one main surface of an n− drift layer. N+ cathode layer having an impurity concentration more than that of the n− drift layer is formed on the other main surface. An anode electrode is formed on the surface of the p anode layer. A cathode electrode is formed on the surface of the n+ cathode layer. N-type broad buffer region having a net doping concentration more than the bulk impurity concentration of a wafer and less than the n+ cathode layer and p anode layer is formed in the n− drift layer. Resistivity ρ0 of the n− drift layer satisfies 0.12V0≦ρ0≦0.25V0 with respect to rated voltage V0. Total amount of net doping concentration of the broad buffer region is equal to or more than 4.8×1011 atoms/cm2 and equal to or less than 1.0×1012 atoms/cm2. |
申请公布号 |
US2015303248(A1) |
申请公布日期 |
2015.10.22 |
申请号 |
US201514730940 |
申请日期 |
2015.06.04 |
申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
NEMOTO Michio;YOSHIMURA Takashi |
分类号 |
H01L29/06;H01L29/08;H01L29/861;H01L29/10;H01L29/739;H01L29/36 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Kawasaki-shi JP |