SEMICONDUCTOR DEVICE

摘要

A semiconductor device which uses a fin-type semiconductor layer to form a bipolar transistor. The substrate of the device is a semiconductor substrate. A collector is a first-conductivity type impurity region which is formed in the semiconductor substrate. A base is a second-conductivity type impurity region which is formed in the surface layer of the collector. A first semiconductor layer is a fin-type semiconductor layer which lies over the base. An emitter is formed in the first semiconductor layer and its bottom is coupled to the base. A first contact is coupled to the collector, a second contact is coupled to the base, and a third contact is coupled to the emitter.

主权项

1. A semiconductor device comprising:
a semiconductor substrate; a first first-conductivity type region formed in the semiconductor substrate; a second-conductivity type region formed in a surface layer of the first first-conductivity type region; a first semiconductor layer located over the second-conductivity type region; a second first-conductivity type region formed in the first semiconductor layer with a bottom thereof coupled to the second-conductivity type region; a first contact coupled to the first first-conductivity type region; a second contact coupled to the second-conductivity type region; and a third contact coupled to the second first-conductivity type region.