发明名称 SUBSTRATE HAVING ELECTRICAL INTERCONNECTION STRUCTURES AND FABRICATION METHOD THEREOF
摘要 A method for fabricating a substrate having an electrical interconnection structure is provided, which includes the steps of: providing a substrate body having a plurality of conductive pads and first and second passivation layers sequentially formed on the substrate body and exposing the conductive pads; forming a seed layer on the second passivation layer and the conductive pads; forming a first metal layer on each of the conductive pads, wherein the first metal layer is embedded in the first and second passivation layers without being protruded from the second passivation layer; and forming on the first metal layer a second metal layer protruded from the second passivation layer. As such, when the seed layer on the second passivation layer is removed by etching using an etchant, the etchant will not erode the first metal layer, thereby preventing an undercut structure from being formed underneath the second metal layer.
申请公布号 US2015303139(A1) 申请公布日期 2015.10.22
申请号 US201514688510 申请日期 2015.04.16
申请人 Siliconware Precision Industries Co., Ltd. 发明人 Wu Po-Yi;Lu Chun-Hung
分类号 H01L23/498;C23F1/00;H01L21/48 主分类号 H01L23/498
代理机构 代理人
主权项 1. A substrate having an electrical interconnection structure, comprising: a substrate body having a plurality of conductive pads; a first passivation layer formed on the substrate body and having a plurality of first openings for exposing at least a portion of each of the conductive pads; a second passivation layer formed on the first passivation layer, and having a plurality of second openings for exposing the exposed portion of each of the conductive pads; a first metal layer, formed on the exposed portion of each of the conductive pads and the first passivation layer, and embedded in the second passivation layer without being protruded from the second passivation layer; and a second metal layer formed on the first metal layer and protruded from the second passivation layer.
地址 Taichung TW
您可能感兴趣的专利