| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
| 摘要 |
A semiconductor memory device includes: a first memory region including a plurality of first memory cells, two or more of which are simultaneously selected by a single address, and stores a first single datum; and a second memory region including a plurality of second memory cells, each of which is selected by the single address, and stores a second single datum. |
| 申请公布号 |
US2015302899(A1) |
申请公布日期 |
2015.10.22 |
| 申请号 |
US201414520068 |
申请日期 |
2014.10.21 |
| 申请人 |
SK hynix Inc. |
发明人 |
KIM Kwan-Weon |
| 分类号 |
G11C5/02;G11C7/06;G11C5/06 |
主分类号 |
G11C5/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor memory device, comprising:
a first memory region including a plurality of first memory cells, two or more of which are simultaneously selected by a single address, and stores a first single datum; and a second memory region including a plurality of second memory cells, each of which is selected by the single address, and stores a second single datum. |
| 地址 |
Gyeonggi-do KR |
