发明名称 DISPLAY DEVICE
摘要 To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.
申请公布号 US2015301395(A1) 申请公布日期 2015.10.22
申请号 US201514746885 申请日期 2015.06.23
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 YOKOYAMA Masatoshi;KOMORI Shigeki;SATO Manabu;OKAZAKI Kenichi;YAMAZAKI Shunpei
分类号 G02F1/1333;G02F1/1368;H01L29/04;H01L27/12;H01L29/423;H01L29/786;G02F1/1343;G02F1/1362 主分类号 G02F1/1333
代理机构 代理人
主权项 1. A display device comprising: a pixel portion comprising: a transistor comprising a semiconductor layer comprising indium, gallium, and zinc;a first inorganic insulating film over the transistor;an organic insulating film over the first inorganic insulating film;a first transparent conductive layer over the organic insulating film;a second inorganic insulating film over the first transparent conductive layer; anda second transparent conductive layer over the first transparent conductive layer with the second inorganic insulating film interposed therebetween, wherein the second transparent conductive layer is electrically connected to one of a source electrode layer and a drain electrode layer of the transistor in an opening, wherein the opening is formed in the organic insulating film and the first inorganic insulating film, wherein an edge portion of the second inorganic insulating film overlaps with the organic insulating film, and wherein the organic insulating film comprises a region which does not overlap with the second inorganic insulating film and the second transparent conductive layer.
地址 Atsugi-shi JP
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