| 摘要 |
The present invention provides an apparatus for continuously preparing silicon nitride, comprising: a synthesis reactor having a transversely arranged cylindrical shape and preparing silicon diamide (Si(NH)2), which is a product, and ammonium chloride (NH4Cl), which is a by-product, by being horizontally supplied with tetrachlorosilane (SiCl4) gas and ammonia (NH3) gas through respective nozzles; a thermal decomposition reactor for generating amorphous silicon chloride by thermally decomposing ammonium chloride in a first region and thermally decomposing silicon diamide in a second region by being supplied with a mixture powder of the product and the by-product from the synthesis reactor, wherein the first region and the second region are connectedly formed in series; and a crystallization reactor for crystallizing crystalline silicon nitride (crystal Si3N4) by heating amorphous silicon nitride discharged from the thermal decomposition reactor to 1,200-1,700°C. |
