| 摘要 |
<p>MONOLITHICALLY INTEGRATED SOLAR MODULES AND METHODS OF MANUFACTURE A monolithically integrated photovoltaic (PV) module (200) is provided and includes a first electrically conductive layer (12) and an insulating layer (24). The first electrically conductive layer is disposed below the insulating layer. The PV module further includes a back contact metal layer (28), a p-type semiconductor layer (14), a substantially intrinsic semiconductor layer (16) with a median grain size of at least about five im and comprising cadmium and tellurium, and an n-type semiconductor layer (18). The substantially intrinsic layer is disposed between the p-type and the n-type semiconductor layers forming an active semiconductor stack (30). The back contact metal layer is disposed between the insulating layer and the active semiconductor stack. The PV module further includes a second electrically conductive layer (22) disposed above the active semiconductor stack (30), at least one first trench (11) extending through the back contact metal layer (28), at least one second trench (13) extending through the active semiconductor stack, and at least one third trench (15) extending through the second electrically conductive layer (22). 210 / / / / / / / / 22 - - 16 Fig. 8 200k 13 W2 15 vvvvvvvvv / / vvvvvv I 18 7 -- 7-- 28 w1 - -W3 Fig. 9</p> |
