| 摘要 |
PROBLEM TO BE SOLVED: To provide a deposition technique capable of adjusting the work function of a metal film for gate electrode.SOLUTION: A composite metal nitride film, such as a TiHfN film having crystallinity is deposited on a substrate, by supplying a first raw material gas containing a first metal element, such as TiCl, and a second raw material gas different from the first raw material gas and containing a second metal element, such as TDEAHf, and ethyl ligand, alternately and repeatedly to a substrate in the processing chamber. The work function can be modulated by controlling the deposition temperature. Thereafter, a TiN film is deposited thereon by supplying TiCl gas and ammonia gas alternately and repeatedly. |
