| 摘要 |
<p>PROBLEM TO BE SOLVED: To make it possible to increase reliability and achieve high density by preventing erroneous programming when changing a metal bridge type resistance change element from low resistance to high-resistance.SOLUTION: When programming to make first and second electrodes conductive by metal bridging by making a first current to flow from the first electrode to the second electrode and to make the first and second electrodes non-conductive by recovering the metal bridge between the first and second electrodes by making a second current to flow in a reverse direction of the first current from the second electrode to the first electrode, the second current is made larger than the first current to form a semiconductor device.</p> |
