| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a photovoltaic device that can perform highly efficient power generation performance with reducing the cost.SOLUTION: A photovoltaic device has a first conduction type crystalline semiconductor substrate, a first conduction type diffusion layer which is provided to the whole surface at a light incident side of the crystalline semiconductor substrate and has the same conduction type as the crystalline semiconductor substrate, an insulation layer provided on the surface of the diffusion layer, an electrode connected to the diffusion layer through an opening portion formed at a part of the insulation layer, and a second conduction type non-crystalline semiconductor layer which is opposite to the first conduction type and provided to the surface at the opposite side to the light incident side of the crystalline semiconductor substrate. The maximum diffusion concentration of the diffusion layer ranges from 5.0×10/cmto 2.0×10/cm, and the depth of the diffusion layer from the surface at the light incident side ranges from 10 nm to 210 nm.</p> |
