发明名称 SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS AND PROGRAM
摘要 <p>PROBLEM TO BE SOLVED: To provide a novel deposition art capable of application to formation of a laminated film in which a SbTe layer containing Sb and Te and a GeTe layer containing Ge and Te are laminated.SOLUTION: A substrate processing method comprises a process of performing a cycle predetermined times, which includes: a process of supplying to a substrate, a first material containing a first element and a second material containing a second element to form a first layer containing a first element and a second element; and a process of supplying to the substrate, the second material and a third material containing a third element to form a second layer containing the second element and the third element, to form a laminated film on the substrate, in which the first layer and the second layer are laminated. The third material has decomposition temperature lower than that of each of the first material and the second material. In the process of forming the first layer, the third material is supplied in addition to the first material and the second material.</p>
申请公布号 JP2015185614(A) 申请公布日期 2015.10.22
申请号 JP20140059195 申请日期 2014.03.20
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 KITAMURA TADASHI;TAKAURA NORIKATSU
分类号 H01L21/365;C23C16/30;C23C16/455 主分类号 H01L21/365
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