发明名称 STRUCTURE ELECTRON BEAM INSPECTION SYSTEM FOR INSPECTING EXTREME ULTRAVIOLET MASK AND STRUCTURE FOR DISCHARGING EXTREME ULTRAVIOLET MASK
摘要 A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.
申请公布号 US2015305131(A1) 申请公布日期 2015.10.22
申请号 US201514755626 申请日期 2015.06.30
申请人 Hermes Microvision Inc. 发明人 WANG You-Jin;KUAN Chiyan;PAN Chung-Shih
分类号 H05F3/02;H01J37/02 主分类号 H05F3/02
代理机构 代理人
主权项 1. An apparatus for discharging extreme ultraviolet mask (EUV mask) when said EUV mask is inspected by using a charged particle beam inspection tool, comprising: means for conducting charge on an EUV mask while inspecting said EUV mask by using the charged particle beam inspection system having a detector for receiving signal electron emanating from said EUV mask; and a grounding pin for conducting charge on said EUV mask along with said means for conducting charge; wherein charge on said EUV mask is grounded through said means for conducting charge and said grounding pin when said grounding pin moves from a first position to a second position for conducting charge.
地址 Hsinchu City TW