发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME |
摘要 |
<p>According to one embodiment, a semiconductor memory device includes a substrate, a semiconductor pillar provided on the substrate to extend in a vertical direction, a plurality of first electrode films provided sideward of the semiconductor pillar to extend in a first direction. The plurality of first electrode films are disposed to be separated from each other along the vertical direction. The semiconductor memory device further includes a plurality of second electrode films provided between the semiconductor pillar and the first electrode films. The plurality of second electrode films are disposed to be separated from each other along the vertical direction. The semiconductor memory device further includes a first insulating film provided between the semiconductor pillar and the second electrode films, and a second insulating film provided between the second electrode film and the first electrode film.</p> |
申请公布号 |
WO2015105049(A3) |
申请公布日期 |
2015.10.22 |
申请号 |
WO2015JP00044 |
申请日期 |
2015.01.07 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SAKAMOTO, WATARU;SUZUKI, RYOTA;OKAMOTO, TATSUYA;KATO, TATSUYA;ARAI, FUMITAKA |
分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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