| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light receiving element whose contribution (crosstalk between pixels) to neighboring photodiodes is suppressed due to lateral diffusion of carriers generated in a depth position of a Si substrate.SOLUTION: Disclosed is a semiconductor light receiving element including: a first conductive type semiconductor substrate; and a second conductive type semiconductor area constituting a photodiode by junction with the semiconductor substrate. A plurality of photodiodes are arranged in an array form, a modified area caused by laser irradiation is provided between neighboring photodiodes and a depth of the modified area is arbitrarily set by the wavelength of incident light. |
