| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a highly controllable plasma processing apparatus and plasma processing method.SOLUTION: A plasma processing apparatus includes a processing chamber, a first electrode, a first power supply, a second electrode, a second power supply, a detector, and a processing section. The first power supply supplies high frequency power to the first electrode. The second electrode is provided in the processing chamber. The second power supply applies a first voltage to the second electrode in a plurality of first periods, and applies a second voltage in a plurality of second periods. The detector detects the light emitted from a workpiece irradiated with the plasma. The processing section estimates change of the workpiece, on the basis of the results detected in the detector during the plurality of first periods, and the results detected in the detector during the plurality of second periods.</p> |
