发明名称 |
METHOD FOR DETERMINING PROCESSING GAS FLOW RATE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for determining a processing gas flow rate, capable of reducing and preventing ground contamination caused by metal generated due to cleaning discharge.SOLUTION: Disclosed is a method for determining a processing gas flow rate in cleaning discharge of a plasma treatment apparatus including: a treatment chamber 101; gas supply means 150; a stage electrode 104; and an earth 130 covered with insulative ceramics. When the diffusion coefficient of a metal element constituting the surface of the stage electrode is D, the average distance between a workpiece placement surface and the earth is L, and the staying time of processing gas in a plasma discharge space is Tg, the flow rate of the processing gas is determined so as to satisfy the formula of T≤L/(2×D).</p> |
申请公布号 |
JP2015185664(A) |
申请公布日期 |
2015.10.22 |
申请号 |
JP20140060284 |
申请日期 |
2014.03.24 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORP |
发明人 |
KOBAYASHI HIROYUKI;KOYAMA HIKARI;IKENAGA KAZUYUKI;NAWATA MAKOTO |
分类号 |
H01L21/3065;C23C16/44;H01L21/205;H01L21/31 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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