发明名称 |
REACTION TUBE, SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a reaction chamber structure that is good in evacuation efficiency and also good in uniformity of in-plane and inter-plane film thickness, film quality, and electric characteristics of a processed substrate while enhancing gas supply efficiency.SOLUTION: There is provided a reaction tube which forms a processing chamber in which a plurality of substrates are processed by making a predetermined raw material react inside. The reaction tube has an outer tube which is formed cylindrically and has its upper end closed and its lower end opened, and an inner tube which is provided in the outer tube and provided with at least one exhaust slit for discharging the predetermined raw material gas in each of a substrate array region where the plurality of substrates are arrayed and a region below the substrate array region. |
申请公布号 |
JP2015183224(A) |
申请公布日期 |
2015.10.22 |
申请号 |
JP20140060039 |
申请日期 |
2014.03.24 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
SASAKI TAKASHI;MORIMITSU KAZUHIRO;NISHITANI EISUKE;YAMAMOTO TETSUO;FUKUDA MASANAO |
分类号 |
C23C16/455;H01L21/285;H01L21/31 |
主分类号 |
C23C16/455 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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