| 摘要 |
Proposed is a nonvolatile semiconductor storage device, wherein with respect to a first deep well (DW1) and a second deep well (DW2) in a memory unit (1a), voltages required for operations of capacitive transistors (3a, 3b) of a first well (W1) and write transistors (4a, 4b) of a second well (W2) are individually applied to the first deep well and the second deep well without the first deep well and the second deep well being bound to each other, consequently, since in the memory unit, the voltage difference between the first deep well and the first well and the voltage difference between the second deep well and the second well can be made smaller than a voltage difference (18 [V]) generated by a tunnel effect, the junction voltage between the first deep well and the first well and the junction voltage between the second deep well and the second well can be lowered correspondingly, and therefore the nonvolatile semiconductor storage device can be mounted even in a circuit element having low junction withstand voltage and a miniaturized circuit structure. |
