| 摘要 |
PROBLEM TO BE SOLVED: To improve reflection efficiency of a dielectric multilayer film formed on a rear face of a sapphire substrate.SOLUTION: A light emitting element manufacturing method comprises the steps of: forming a buffer layer on a sapphire substrate 10; sequentially laminating on the buffer layer, an n-type layer 11 composed of a group III nitride semiconductor 11, a luminous layer 12 and a p-type layer 13; subsequently forming a transparent electrode 14 on a surface of the p-type layer 13; dry etching a predetermined region to form a trench 19; subsequently forming a p-electrode 15 on the transparent electrode 14 and an n-electrode 16 on the n-type layer 11 exposed on a bottom face of the trench 19; subsequently thinning the sapphire substrate 10 by grinding a rear face 10a of the sapphire substrate 10 (FIG.3(a)); subsequently performing Ar ion irradiation on the rear face 10a of the sapphire substrate 10 to be flattened by surface reconfiguration (FIG.3(b)); subsequently laminating on the rear face 10a of the sapphire substrate 10, a SiOfilm having an optical film thickness of λ/4 and a TiOfilm having an optical film thickness of λ/4 alternately and repeatedly to form a dielectric multilayer film 17 (FIG.3(c)). |
