发明名称 GAS BARRIER FILM AND PRODUCTION METHOD OF GAS BARRIER FILM
摘要 PROBLEM TO BE SOLVED: To provide a gas barrier film which combines barrier performance with flexibility, and a production method thereof.SOLUTION: The gas barrier film includes a substrate film and an inorganic layer. The organic layer includes Si, N, H and O, has an even ratio of Si to N, H and O in a center part in a film thickness direction, has a film thickness greater than 5 nm over an even region having a low ratio of O, and has a region contacting any one or more boundary surfaces in which an O ratio expressed by the formula: (O numbers/N and O total numbers)×100% increases from an even region side in a boundary surface direction and the variation of the O ratio per unit film thickness is 2%/nm-8%/nm. The production method of a gas barrier film includes forming an inorganic layer by a plasma CVD method, and adjusting a time for which an electric power supplied for forming plasma reaches a maximum value from 0 kW and a time for which an electric power for supplying a high frequency wave reaches 0 kW from a maximum value.
申请公布号 JP2015182274(A) 申请公布日期 2015.10.22
申请号 JP20140059541 申请日期 2014.03.24
申请人 FUJIFILM CORP 发明人 NAKAMURA SEIGO;MOCHIZUKI YOSHIHIKO;MUKAI ATSUSHI
分类号 B32B27/00;B32B9/00;B32B37/00;C23C16/42;C23C16/505 主分类号 B32B27/00
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