| 发明名称 |
GRAPHENE BASED ELECTRODES AND APPLICATIONS |
| 摘要 |
Methods of fabricating a graphene film are disclosed. An example method can include providing a substrate, heating the substrate between about 600° C. and about 1100° C. in a chamber, and introducing a carbon source into the chamber at a temperature between about 600° C. and about 1100° C. for about 10 seconds to about 1 minute. The method can further include cooling the substrate to about room temperature to form the graphene film Methods of fabricating pillared graphene nano structures and graphene based devices are also provided. |
| 申请公布号 |
US2015299852(A1) |
申请公布日期 |
2015.10.22 |
| 申请号 |
US201314443300 |
申请日期 |
2013.11.18 |
| 申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
Ozkan Cengiz S.;Ozkan Mihrimah;Guvenc Ali B.;Paul Rajat K.;Lin Jian;Ghazinejad Maziar;Penchev Miro;Guo Shirui;Zhong Jiebin |
| 分类号 |
C23C16/44;H01G9/20;H01G4/008;C01B31/04;H01G9/042;H01G11/52;H01G11/36;C23C16/26;H01G9/145 |
主分类号 |
C23C16/44 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a graphene film, the method comprising:
providing a substrate; heating the substrate between about 600° C. and about 1100° C. in a chamber; introducing a carbon source into the chamber at a temperature between about 600° C. and about 1100° C. for about 10 seconds to about 1 minute; and cooling the substrate to about room temperature to form the graphene film. |
| 地址 |
Oakland CA US |
