RECTIFICATION DIODE AND METHOD FOR MANUFACTURING SAME

摘要

A rectification diode and a method for manufacturing the same are provided. The rectification diode comprises: an insulator layer including an insulator material; and a semiconductor layer located on the insulator layer and including an n-type Zno-based oxide semiconductor, wherein a rectification characteristic is exhibited between the insulator layer and the semiconductor layer. Thus, it is possible to provide a rectification diode having an improved electrical characteristic. Furthermore, when compared with conventional oxide diodes, the present invention offers a wider choice of materials since a P-type oxide semiconductor having many restrictions is replaced with the insulator layer. Thus, the range of adjusting electrical characteristic changes can also be extended.