发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce inductance of a positive electrode conductor and a negative electrode conductor and increase heat dissipation performance in a semiconductor device including six semiconductor chips which constitute three pairs of upper and lower arms of a three-phase inverter, and the paired positive electrode conductor and negative electrode conductor as conductors connected to a DC power supply.SOLUTION: A semiconductor device comprises two paired power supply terminals, each pair including a positive electrode terminal (31) and a negative electrode terminal (41) which are arranged adjacent to each other in an X direction. A positive electrode conductor (30) has a positive electrode connection part (33) which electrically connects a positive electrode heat sink (32) and the positive electrode terminal and electrically connecting the positive electrode terminals with each other. A negative electrode conductor (40) has a negative electrode connection part (43) which electrically connects a negative electrode heat sink (42) and the negative electrode terminal and electrically connects the negative electrode terminals with each other. At least one of the positive electrode connection part and the negative electrode connection part forms a layered structure with the other conductor via a mold resin part (100) and a plate thickness direction of the connection part which forms the layered structure is assumed to be a thickness direction.
申请公布号 JP2015186438(A) 申请公布日期 2015.10.22
申请号 JP20140064197 申请日期 2014.03.26
申请人 DENSO CORP 发明人 IWABUCHI AKIRA;KANAMORI ATSUSHI;ONODA KENJI;OMAE SHOICHIRO
分类号 H02M7/48 主分类号 H02M7/48
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