| 摘要 |
PROBLEM TO BE SOLVED: To propose a nonvolatile configuration memory having a small area.SOLUTION: The configuration memory related to the present embodiment includes: memory cell MC0 comprising a first MISFET Mwhose source and drain on one side are connected to a first bit line LBLand whose gate is connected to a first word line WL_C1 and a second MISFET Mwhose source and drain on one side are connected to a second bit line LBLand whose gate is connected to the first word line WL_C1; and a sense amplifier SA0 connected to the first and second bit lines LBLand LBL. Data are written into the memory cell MC0 by injecting channel hot electrons into a gate insulation layer of the first MISFET Mthereby changing a threshold voltage of the first MISFET Mfrom a first value to a second value and leaving a threshold voltage of the second MISFET Mas the first value. |
