SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an art capable of controlling a deposition position of a silicon nodule.SOLUTION: A semiconductor device 1 comprises a silicon layer 2, a silicon-containing surface side aluminum layer 3 layered in contact with a part of a surface of the silicon layer 2; and an insulation film 5 layered in contact with a part of the surface of the silicon layer and in contact with and adjacent to the surface side aluminum layer 3. When observed from a perpendicular direction with respect to the surface of the silicon layer 2, the insulation film 5 has an insulation film body 10 and a plurality of first nodule deposition parts 11 which project from the insulation film body 10 toward the surface side aluminum layer 3. When observed from the perpendicular direction, a lateral face 20 of the insulation film body 10 and lateral faces 21 of the first nodule deposition parts 1 form corners 31.