发明名称 |
SHIFT REGISTER UNIT, GATE DRIVING APPARATUS AND DISPLAY DEVICE |
摘要 |
Provided is a shift register unit, a gate driving apparatus and a display device capable of increasing a lifespan of a shift register. The shift register unit according to the present disclosure includes: a first thin film field effect transistor, a drain thereof connected with a first signal terminal, a source thereof connected with the outputting node at the present stage, a gate thereof connected with a first node; a second thin film field effect transistor, a drain thereof connected with the first signal terminal, a source thereof connected with the pulling-up node, and a gate thereof connected with the first node; a third thin film field effect transistor, a drain thereof connected with a second signal terminal, a source thereof connected with the outputting node at the present stage, and a gate thereof connected with a second node; a fourth thin film field effect transistor, a drain thereof connected with the second signal terminal, a source thereof connected with the pulling-up node, and a gate thereof connected with the second node; and a node voltage control module, configured to control the first node and the second node to be in a high potential state alternatively when the shift register unit is in a pulling-down phase. The present disclosure increases the lifespan of the shift register. |
申请公布号 |
US2015302935(A1) |
申请公布日期 |
2015.10.22 |
申请号 |
US201314370419 |
申请日期 |
2013.07.04 |
申请人 |
BOE Technology Group Co., Ltd. ;Hefei Boe Optoelectronics Technology Co., Ltd. |
发明人 |
ZENG MIAN;LI XIAOHE;KIM JAIKWANG |
分类号 |
G11C19/28;G09G3/36 |
主分类号 |
G11C19/28 |
代理机构 |
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代理人 |
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主权项 |
1. A shift register unit comprising a capacitor, wherein one terminal of the capacitor is connected with an outputting node at a present stage, and the other terminal of the capacitor is connected with a pulling-up node, and the shift register unit further comprises:
a first thin film field effect transistor, a drain thereof connected with a first signal terminal, a source thereof connected with the outputting node at the present stage, a gate thereof connected with a first node; wherein the first signal terminal is configured to output a low potential signal when the first thin film field effect transistor is turned on; a second thin film field effect transistor, a drain thereof connected with the first signal terminal, a source thereof connected with the pulling-up node, and a gate thereof connected with the first node; wherein the first signal terminal is configured to output the low potential signal when the second thin film field effect transistor is turned on; a third thin film field effect transistor, a drain thereof connected with a second signal terminal, a source thereof connected with the outputting node at the present stage, and a gate thereof connected with a second node; wherein the second signal terminal is configured to output the low potential signal when the third thin film field effect transistor is turned on; a fourth thin film field effect transistor, a drain thereof connected with the second signal terminal, a source thereof connected with the pulling-up node, and a gate thereof connected with the second node; wherein the second signal terminal is configured to output the low potential signal when the fourth thin film field effect transistor is turned on; and a node voltage control module, configured to control the first node and the second node to be in a high potential state alternatively when the shift register unit is in a pulling-down phase. |
地址 |
Beijing CN |