发明名称 SHIFT REGISTER UNIT, GATE DRIVING APPARATUS AND DISPLAY DEVICE
摘要 Provided is a shift register unit, a gate driving apparatus and a display device capable of increasing a lifespan of a shift register. The shift register unit according to the present disclosure includes: a first thin film field effect transistor, a drain thereof connected with a first signal terminal, a source thereof connected with the outputting node at the present stage, a gate thereof connected with a first node; a second thin film field effect transistor, a drain thereof connected with the first signal terminal, a source thereof connected with the pulling-up node, and a gate thereof connected with the first node; a third thin film field effect transistor, a drain thereof connected with a second signal terminal, a source thereof connected with the outputting node at the present stage, and a gate thereof connected with a second node; a fourth thin film field effect transistor, a drain thereof connected with the second signal terminal, a source thereof connected with the pulling-up node, and a gate thereof connected with the second node; and a node voltage control module, configured to control the first node and the second node to be in a high potential state alternatively when the shift register unit is in a pulling-down phase. The present disclosure increases the lifespan of the shift register.
申请公布号 US2015302935(A1) 申请公布日期 2015.10.22
申请号 US201314370419 申请日期 2013.07.04
申请人 BOE Technology Group Co., Ltd. ;Hefei Boe Optoelectronics Technology Co., Ltd. 发明人 ZENG MIAN;LI XIAOHE;KIM JAIKWANG
分类号 G11C19/28;G09G3/36 主分类号 G11C19/28
代理机构 代理人
主权项 1. A shift register unit comprising a capacitor, wherein one terminal of the capacitor is connected with an outputting node at a present stage, and the other terminal of the capacitor is connected with a pulling-up node, and the shift register unit further comprises: a first thin film field effect transistor, a drain thereof connected with a first signal terminal, a source thereof connected with the outputting node at the present stage, a gate thereof connected with a first node; wherein the first signal terminal is configured to output a low potential signal when the first thin film field effect transistor is turned on; a second thin film field effect transistor, a drain thereof connected with the first signal terminal, a source thereof connected with the pulling-up node, and a gate thereof connected with the first node; wherein the first signal terminal is configured to output the low potential signal when the second thin film field effect transistor is turned on; a third thin film field effect transistor, a drain thereof connected with a second signal terminal, a source thereof connected with the outputting node at the present stage, and a gate thereof connected with a second node; wherein the second signal terminal is configured to output the low potential signal when the third thin film field effect transistor is turned on; a fourth thin film field effect transistor, a drain thereof connected with the second signal terminal, a source thereof connected with the pulling-up node, and a gate thereof connected with the second node; wherein the second signal terminal is configured to output the low potential signal when the fourth thin film field effect transistor is turned on; and a node voltage control module, configured to control the first node and the second node to be in a high potential state alternatively when the shift register unit is in a pulling-down phase.
地址 Beijing CN