BOLOMETER TYPE INFRARED SENSOR AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a bolometer type infrared sensor that can provide a high TCR even if the film formation temperature of vanadium oxide is 400°C or less.SOLUTION: A VOfilm 2 to be a resistor film having the rutile structure is provided by the epitaxial growth on a surface of a TiOfilm 1 to be an undercoat insulator film having the rutile structure. Such formation of the VOfilm having the rutile structure by the epitaxial growth on the TiOfilm 1 having the rutile structure can provide a high TCR even if the film formation temperature of the VOfilm is 400°C or less.