| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a solid-state image pickup device with satisfactory features and manufacturing method thereof.SOLUTION: There is provided a solid-state image pickup device including a semiconductor layer; a first layer; a second layer; and a third layer. The semiconductor layer performs photo-electric conversion. The first layer has a first refraction index. The second layer is formed between the first layer and the semiconductor layer, which contains metal oxide, and has a second refraction index smaller than the first refraction index. The third layer is formed between the first layer and the second layer, which contains an element covalent-bonded with oxygen, and has a third refraction index smaller than the first refraction index.</p> |
