| 摘要 |
A nonvolatile memory device includes a substrate having a first charge trap region, a second charge trap region, and a selection region between the first and second charge trap regions. A well region is disposed in the substrate. A source region and a drain region are disposed in the well region. A gate structure is disposed on a channel region between the source region and the drain region. The gate structure includes: a first tunneling layer, a first charge trap layer, a first blocking layer and a first conductive layer stacked in the first charge trap region; a second tunneling layer, a second charge trap layer, a second blocking layer and a second conductive layer stacked in the second charge trap region; and a first insulation layer, a second insulation layer, a third insulation layer and a third conductive layer stacked in the selection region. |
| 主权项 |
1. A nonvolatile memory device comprising:
a substrate having a first charge trap region, a second charge trap region, and a selection region between the first and second charge trap regions, wherein the first charge trap region, the selection region and the second charge trap region are arrayed in one direction; a well region having a first conductivity type and disposed in the substrate, wherein a surface of the well region is exposed; a source region and a drain region disposed in the well region to be separated from each other by a channel region, wherein the source region and the drain region have a second conductivity type different from the first conductivity type; and a gate structure disposed on the channel region, wherein the gate structure includes: a first tunneling layer, a first charge trap layer, a first blocking layer and a first conductive layer, stacked in the first charge trap region; a second tunneling layer, a second charge trap layer, a second blocking layer and a second conductive layer stacked in the second charge trap region; and a first insulation layer, a second insulation layer, a third insulation layer and a third conductive layer stacked in the selection region. |
