发明名称 DICING WAFERS HAVING SOLDER BUMPS ON WAFER BACKSIDE
摘要 Approaches for hybrid laser scribe and plasma etch dicing process for a wafer having backside solder bumps are described. For example, a method of dicing a semiconductor wafer having integrated circuits on a front side thereof and corresponding arrays of metal bumps on a backside thereof involves applying a dicing tape to the backside of the semiconductor wafer, the dicing tape covering the arrays of metal bumps. The method also involves, subsequently, forming a mask on the front side of the semiconductor wafer, the mask covering the integrated circuits. The method also involves forming scribe lines on the front side of the semiconductor wafer with a laser scribing process, the scribe lines formed in the mask and between the integrated circuits. The method also involves plasma etching the semiconductor wafer through the scribe lines to singulate the integrated circuits, the mask protecting the integrated circuits during the plasma etching.
申请公布号 US2015303111(A1) 申请公布日期 2015.10.22
申请号 US201414543747 申请日期 2014.11.17
申请人 Lei Wei-Sheng;Papanu James S.;Iyer Aparna;Eaton Brad;Kumar Ajay 发明人 Lei Wei-Sheng;Papanu James S.;Iyer Aparna;Eaton Brad;Kumar Ajay
分类号 H01L21/78;H01L21/3065;H01L21/268 主分类号 H01L21/78
代理机构 代理人
主权项 1. A method of dicing a substrate comprising device regions on a front side thereof and corresponding arrays of metal features on a backside thereof, the method comprising: providing the substrate having a carrier film applied to the backside thereof, the carrier film covering the arrays of metal features, the substrate also having a patterned mask on the front side thereof, the patterned mask covering the device regions and having scribe lines between the device regions; and plasma etching the substrate through the scribe lines to singulate the device regions, the patterned mask protecting the device regions during the plasma etching.
地址 San Jose CA US